T1G4020036-FS

DC ??3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor

KeyFeatures ?Frequency:DCto3.5GHz ?OutputPower(P3dB)1:200W ?LinearGain1:18.1dB ?TypicalPAE3dB 1:67.6 ?OperatingVoltage:50V ?CWandPulsecapable Note1:@2.8GHzLoadPull(Halfofdevice)

T1G4020036-FS

2 x 120W Peak Power, 2 x24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

T1G4020036-FS-EVB1

DC ??3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor

KeyFeatures ?Frequency:DCto3.5GHz ?OutputPower(P3dB)1:200W ?LinearGain1:18.1dB ?TypicalPAE3dB 1:67.6 ?OperatingVoltage:50V ?CWandPulsecapable Note1:@2.8GHzLoadPull(Halfofdevice)

T1G4020036-FS_15

2 x 120W Peak Power, 2 x24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

T1G4020036-FSEVB1

2 x 120W Peak Power, 2 x24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

T1G4020036-FL

2x120WPeakPower,2x24WAveragePower,36VDC??3.5GHz,GaNRFPowerTransistor