首頁 >SWD1N60>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

SWD1N60

N-channel MOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWD1N60

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SWD1N60C

N-channel D-PAK/I-PAK/TO-92 MOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWD1N60C

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

SWD1N60C

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SWI1N60

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWI1N60C

N-channelD-PAK/I-PAK/TO-92MOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWL1N60

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

TC1N60

500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌電子德昌電子(集團(tuán))有限公司

TC1N60

500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌電子德昌電子(集團(tuán))有限公司

TC1N60P

500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌電子德昌電子(集團(tuán))有限公司

TC1N60P

500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌電子德昌電子(集團(tuán))有限公司

TSD1N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TSM1N60

N-ChannelPowerEnhancementModeMOSFET

VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8? GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM1N60CH

N-ChannelPowerEnhancementModeMOSFET

VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8? GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM1N60CP

N-ChannelPowerEnhancementModeMOSFET

VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8? GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM1N60CPRO

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TSM1N60L

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM1N60L

600VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM1N60LCH

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    SWD1N60

  • 制造商:

    SEMIPOWER

  • 制造商全稱:

    SEMIPOWER

  • 功能描述:

    N-channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
samwin
22+
TO-252
6000
十年配單,只做原裝
詢價(jià)
infineon
2023+
TO-252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
samwin
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
samwin
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
SAMWIN
22+
TO-252
20000
保證原裝正品,假一陪十
詢價(jià)
SAMWIN
22+
TO-252
100000
代理渠道/只做原裝/可含稅
詢價(jià)
24+
N/A
64000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
Sage Millmeter
24+
模塊
400
詢價(jià)
更多SWD1N60供應(yīng)商 更新時(shí)間2025-1-12 14:02:00