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SW75N03

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

75N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

75N03R

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

EMP75N03HR

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: SingleNChannelMOSFET UIS,Rg100%Tested Pb-FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

GFB75N03

N-ChannelEnhancement-ModeMOSFET

GE

GE Industrial Company

GJ75N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

ME75N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ME75N03L

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ME75N03L-G

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MI75N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTB75N03HDL

TMOSPOWERFETLOGICLEVEL75AMPERES25VOLTS

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB75N03HDL

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP75N03

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP75N03HDL

TMOSPOWERFETLOGICLEVEL75AMPERESRDS(on)=9.0mOHM25VOLTS

HDTMOSE-FETHighDensityPowerFET N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP75N03HDL

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB75N03

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB75N03R

PowerMOSFET75Amps,25VoltsN??hannelD2PAK,TO??20

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB75N03R

PowerMOSFET75Amps,25VoltsN-ChannelD2PAK,TO-220

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB75N03RG

PowerMOSFET75Amps,25VoltsN??hannelD2PAK,TO??20

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP75N03R

PowerMOSFET75Amps,25VoltsN-ChannelD2PAK,TO-220

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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