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STW60N10

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100C ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLI

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW60N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.025Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

60N10

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

B60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

B60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

B60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

B60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

B60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

B60N10

60A100VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

CEB60N10

N-ChannelEnhancementModeFieldEffectTransistor

URES ■100V,60A,RDS(ON)=23.5m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB60N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,57A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP60N10

N-ChannelEnhancementModeFieldEffectTransistor

URES ■100V,60A,RDS(ON)=23.5m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP60N10

60A,100VHeatsinkPlanarN-ChannelPowerMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220C

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

CEP60N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

詳細參數

  • 型號：

    STW60N10

  • 制造商：

    MISCELLANEOUS

供應商型號品牌批號封裝庫存備注價格
IR
2410+
TO-3P
21000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
ST
17+
TO-247
6200
詢價
ST
23+
TO-3P
9896
詢價
24+
N/A
6000
詢價
ST
05+
TO-247
2380
原裝進口
 詢價
ST
24+
TO-3P
1000
原裝現(xiàn)貨熱賣
 詢價
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
ST
2020+
TO-247
790
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
2020+
TO-3P
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
ST
24+
TO-247
2987
只售原裝自家現(xiàn)貨!誠信經營!歡迎來電!
 詢價
更多STW60N10供應商 更新時間2025-1-15 16:12:00

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