STU10NM60N

Marking：10NM60N；Package：IPAK；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STU10NM65N

N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STU10P6F6

Marking：10P6F6；Package：IPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STU10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STU11N65M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STU11N65M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STU11N65M5

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STU11N65M5

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STU11NB60

N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STU11NC60

N-CHANNEL 600V - 0.48ohm - 11A Max220 PowerMeshII MOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0