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DMN5L06

SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?SingleN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage(1.0Vmax) ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?ESDProtectedupto2kV ?GreenDevice

DIODES

Diodes Incorporated

DMN5L06DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06DMKQ

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. ?GeneralPurposeInterfacingSwitch ?PowerManagementFunctions Features ?LowOn-Resi

DIODES

Diodes Incorporated

DMN5L06DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance(1.0VMax) ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?ESDProtectedupto2kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits ?LowOn-Re

DIODES

Diodes Incorporated

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ST/意法
23+
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50000
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ST/意法
2022
DO-201AD
80000
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ST
13+
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29922
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ST
2023+
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80000
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ST
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100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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ST/意法
23+
TO252
10880
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ST
23+
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8560
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STMicro.
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更多STTH5L06IC供應(yīng)商 更新時(shí)間2025-1-31 11:00:00

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