STPSC6C065-Y中文資料意法半導體數據手冊PDF規(guī)格書

Features

? AEC-Q101 qualified

? No or negligible reverse recovery

? Switching behavior independent of

temperature

? Dedicated to PFC applications

? High forward surge capability

? PPAP capable

? ECOPACK?2 compliant component

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature and is ideal for automotive

applications.

Especially suited for use as boost diode, this

rectifier will enhance the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.