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STP60N043DM9中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

STP60N043DM9
廠商型號(hào)

STP60N043DM9
功能描述

N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
文件大小

227.41 Kbytes
頁面數(shù)量

12 頁
生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS【意法半導(dǎo)體】

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)
原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載
更新時(shí)間

2025-5-19 15:48:00
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STP60N043DM9規(guī)格書詳情

Features

? Fast-recovery body diode

? Worldwide best RDS(on) per area among silicon-based fast recovery devices

? Low gate charge, input capacitance and resistance

? 100 avalanche tested

? Extremely high dv/dt ruggedness

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring

very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based

DM9 technology benefits from a multi-drain manufacturing process which allows

an enhanced device structure. The fast-recovery diode featuring very low recovery

charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power

MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS

phase-shift converters.

Applications

? Power supplies and converters

? LLC resonant converter

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
24+
TO-220
56000
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持
 詢價(jià)
ST
23+
TO-220
10000
專做原裝正品,假一罰百!
 詢價(jià)
ST
23+
TO-220
8795
詢價(jià)
ST/意法半導(dǎo)體
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
ST
24+
TO-220
7000
只做原裝進(jìn)口!正品支持實(shí)單!
 詢價(jià)
ST/意法
22+
TO-220
20000
原裝現(xiàn)貨,實(shí)單支持
 詢價(jià)
VBsemi
24+
TO220
5000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
ST
17+
TO-220
6200
詢價(jià)
VBsemi
22+23+
TO220
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
VBsemi
24+
TO220
12000
原裝
 詢價(jià)

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