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STP3NA80

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

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STP3NA80FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

P3NA80FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

PJD3NA80

800VN-ChannelMOSFET

PANJITPan Jit International Inc.

強茂股份有限公司

PJD3NA80

800VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@1.5A

PANJITPan Jit International Inc.

強茂股份有限公司

PJF3NA80

800VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@1.5A

PANJITPan Jit International Inc.

強茂股份有限公司

PJF3NA80

800VN-ChannelMOSFET

PANJITPan Jit International Inc.

強茂股份有限公司

PJP3NA80

800VN-ChannelMOSFET

PANJITPan Jit International Inc.

強茂股份有限公司

PJP3NA80

800VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@1.5A

PANJITPan Jit International Inc.

強茂股份有限公司

PJU3NA80

800VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@1.5A

PANJITPan Jit International Inc.

強茂股份有限公司

PJU3NA80

800VN-ChannelMOSFET

PANJITPan Jit International Inc.

強茂股份有限公司

STB3NA80

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.5? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STP3NA80

  • 功能描述：

    MOSFET REORD 511-STP3NB80 TO-220 N-CH 800V 3.1

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ST
17+
TO-220
6200
詢價
ST
24+
TO-220
1250
原裝現(xiàn)貨熱賣
 詢價
ST
23+
TO-220
8795
詢價
ST
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
ST
2022
TO-220
20000
全新原裝現(xiàn)貨熱賣
 詢價
ST
TO-220
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
2315+
TO-220
3866
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
ST
24+
N/A
5400
詢價
ST/意法
21+
65230
詢價
ST
22+
TO-220F
6000
十年配單,只做原裝
 詢價
更多STP3NA80供應商 更新時間2024-12-22 16:00:00

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