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STP17N80K5

Marking：17N80K5；Package：TO-220；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh? K5 Power MOSFET in a TO-220 package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IXFH17N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH17N80Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabili

IXYS

IXYS Corporation

IXFN17N80

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT17N80Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabili

IXYS

IXYS Corporation

SIHA17N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導體

SIHA17N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導體

SIHA17N80E

iscN-ChannelMOSFETTransistor

·FEATURES ·Lowdrain-sourceon-resistance: RDS(ON)=0.29Ω(MAX) ·Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·SwitchingVoltageRegulators

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHA17N80E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導體

SIHB17N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導體

SIHB17N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHB17N80E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHG17N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導體

SIHG17N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHG17N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHG17N80E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導體

SIHP17N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導體

SIHP17N80E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導體

SIHP17N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導體產品-原裝正品
 詢價
ST
22+
30000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價
ST
23+
NA
30000
15年原裝正品企業(yè)
 詢價
ST
23+
TO-220
12500
ST系列在售,可接長單
 詢價
ST/意法
23+
NA
12730
原裝正品代理渠道價格優(yōu)勢
 詢價
ST
21+
TO-220
5000
原裝現(xiàn)貨假一賠十
 詢價
STM
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
 詢價
ST
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多STP17N80供應商 更新時間2025-1-18 16:46:00

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