首頁>STP11N65M5>規(guī)格書詳情

STP11N65M5中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STP11N65M5
廠商型號

STP11N65M5

功能描述

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

文件大小

1.2819 Mbytes

頁面數(shù)量

25

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-2 22:59:00

STP11N65M5規(guī)格書詳情

Description

These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

■ Worldwide best RDS(on) * area

■ Higher VDSS rating and high dv/dt capability

■ Excellent switching performance

■ 100 avalanche tested

Applications

■ Switching applications

產(chǎn)品屬性

  • 型號:

    STP11N65M5

  • 功能描述:

    MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST(意法)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價
ST
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
ST
22
TO-220
25000
3月31原裝,微信報價
詢價
ST(意法半導(dǎo)體)
23+
TO220
6000
誠信服務(wù),絕對原裝原盤
詢價
ST/意法半導(dǎo)體
2023
TO-220-3
6200
公司原裝現(xiàn)貨/支持實單
詢價
ST
21+
35200
一級代理/放心采購
詢價
ST/意法半導(dǎo)體
23+
TO-220-3
7188
秉承只做原裝 終端我們可以提供技術(shù)支持
詢價
st
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
ST/意法
23+
TO-220
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
ST/意法半導(dǎo)體
21+
TO-220-3
8860
原裝現(xiàn)貨,實單價優(yōu)
詢價