首頁>STI21NM60ND>規(guī)格書詳情

STI21NM60ND中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STI21NM60ND
廠商型號

STI21NM60ND

功能描述

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件大小

545.74 Kbytes

頁面數(shù)量

18

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-5 17:18:00

STI21NM60ND規(guī)格書詳情

Description

The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.

Features

■ The worldwide best RDS(on)*area amongst the fast recovery diode devices

■ 100 avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

Application

■ Switching applications

產(chǎn)品屬性

  • 型號:

    STI21NM60ND

  • 功能描述:

    MOSFET N-Ch, 600V-0.17ohms FDMesh 17A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST/意法
23+
TO220MONOC..
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
ST
2315+
TO-262
3866
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價
ST
TO-262
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
SGS-THOMSON
2020+
QFP-48
3524
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ST
17+
TO-262
6200
詢價
ST
24+
TO220MONOC..
8866
詢價
ST
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價
STI
24+
QFP-48
10572
原裝現(xiàn)貨假一賠十
詢價
STM原廠目錄
24+
I2PAK
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
詢價
ST
22+
TO220MONOC.
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價