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STI30NM60ND

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI32N65M5

Marking:I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=22A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=148mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI32N65M5

N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D?PAK, I?PAK, TO-220FP, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

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STI33N60M6

N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in an I2PAK package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

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STI34N65M5

Marking:34N65M5;Package:I2PAK;N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI34N65M5

Marking:I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor

FEATURES ?DrainCurrent–ID=28A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI3508

28V High Efficiency 1MHz, 2A Step Up Regulator

FEATURES ?Integrated80mΩPowerMOSFET ?2Vto24VInputVoltage ?1MHzFixedSwitchingFrequency ?Internal4ASwitchCurrentLimit ?AdjustableOutputVoltage ?InternalCompensation ?Upto28VOutputVoltage ?AutomaticPulseFrequencyModulation ?ModeatLightLoads ?upto97Eff

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STI35N65M5

Marking:I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-262(I2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI35N65M5

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D?PAK, TO-220FP, I?PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI410N4F7AG

Marking:410N4F7;Package:I2PAK;Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET? F7 Power MOSFET in an I2PAK package

Features ?Designedforautomotiveapplications ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

晶體管資料

  • 型號:

    STI10

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

  • 封裝形式:

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

  • 可代換的型號:

    3DG84D,

  • 最大耗散功率:

    1W

  • 放大倍數(shù):

  • 圖片代號:

    NO

  • vtest:

    100

  • htest:

    999900

  • atest:

    1

  • wtest:

    1

產(chǎn)品屬性

  • 產(chǎn)品編號:

    STI

  • 制造商:

    Eaton - Electronics Division

  • 類別:

    電路保護 > 配件

  • 系列:

    HTB

  • 包裝:

    散裝

  • 配件類型:

    旋鈕

  • 配套使用/相關(guān)產(chǎn)品:

    HTB 系列

  • 描述:

    FUSE KNOB ASSEMBLY

供應(yīng)商型號品牌批號封裝庫存備注價格
Eaton
22+
NA
168
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ST
24+/25+
30
原裝正品現(xiàn)貨庫存價優(yōu)
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ST
24+
QFP-208
4650
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STEMENS
24+
BGA
6868
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ST
24+
QFP
1
本站現(xiàn)庫存
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ST
23+
QFP80
3100
絕對現(xiàn)貨庫存
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STM
24+
QFP208
6232
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
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ST(意法)
23+
NA
20094
原裝正品 可支持驗貨,歡迎咨詢
詢價
ST
05+
QFP
60
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ST
23+
BGA
3260
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
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