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55N10

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

CED55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU55N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

CEU55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQA55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=26mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQA55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQAF55N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.026Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    STH55N10FI

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-218VAR

供應商型號品牌批號封裝庫存備注價格
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
ST
05+
TO-247
2000
原裝進口
 詢價
24+
N/A
4540
詢價
ST
2020+
TO-3P
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
ST
24+
TO-3P
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
ST
21+
TO-3P
23480
詢價
ST
23+
TO-247
8795
詢價
SAM
21+
TO-3P
1400
原裝現(xiàn)貨假一賠十
 詢價
ST
97+
TO-3P
1400
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
24+
TO-3P
7633
只做原裝進口!正品支持實單!
 詢價
更多STH55N10FI供應商 更新時間2025-3-29 10:00:00

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