STGW60H65F_V01中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Features

■ High speed switching

■ Tight parameter distribution

■ Safe paralleling

■ Low thermal resistance

■ 6 μs short-circuit withstand time

■ Lead free package

Applications

■ Photovoltaic inverters

■ Uninterruptible power supply

■ Welding

■ Power factor correction

■ High switching frequency converters

Description

Using advanced proprietary trench gate and field

stop structure, this IGBT leads to an optimized

compromise between conduction and switching

losses maximizing the efficiency for high

switching frequency converters. Furthermore, a

slightly positive VCE(sat) temperature coefficient

and a very tight parameter distribution result in an

easier paralleling operation.