STG200G65FD8AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Features

? AEC-Q101 qualified

? Low-loss series IGBT

? Low VCE(sat) = 1.52 V (typ.) at IC = 200 A

? Positive VCE(sat) temperature coefficient

? Tight parameter distribution

? Maximum junction temperature: TJ = 175 °C

Applications

? EV/HEV traction inverters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.