零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STC | Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
STC | 包裝:托盤(pán) 描述:STORM CENTER MERCHANDISER | Eaton - Bussmann Electrical Division Eaton - Bussmann Electrical Division | Eaton - Bussmann Electrical Division | |
STC | 包裝:托盤(pán) 描述:STORM CENTER MERCHANDISER | Eaton - Bussmann Electrical Division Eaton - Bussmann Electrical Division | Eaton - Bussmann Electrical Division | |
STC | 包裝:托盤(pán) 描述:STORM CENTER MERCHANDISER | Eaton - Bussmann Electrical Division Eaton - Bussmann Electrical Division | Eaton - Bussmann Electrical Division | |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 ohm DESCRIPTION TheSTC03DE150ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE150isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm DESCRIPTION TheSTC03DE170ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE170isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM Description TheSTC03DE170HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE170HPisdesignedforuseinauxflybacksmpsforanythreephaseapplication. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 OHM Description TheSTC03DE170HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE170HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Featur | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 ? Description TheSTC03DE220HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE220HPisdesignedforuseinauxflybackSMPSforanythreephaseapplication. Featur | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33OHM Description TheSTC03DE220HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE220HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM Description TheSTC04IE170HPismanufacturedinMonolithicESBTtechnology,aimedtoprovidethebestperformanceinHighFrequency/Highvoltageapplications.ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentcascodeconfiguration | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W Description TheSTC04IE170HVismanufacturedinMonolithicESBTtechnology,aimedtoprovidethebestperformanceinHighFrequency/Highvoltageapplications.ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentcascodeconfiguration ■Loweq | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Hybrid emitter switched bipolar transistor ESBT? 1200V - 5A - 0.18 ohm Description TheSTC05DE120HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC05DE120HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Genera | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 5 A - 0.10 ohm DESCRIPTION TheSTC05DE150ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC05DE150isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM Description TheSTC05IE150HPismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformanceinhighfrequency/highvoltageapplications.itisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentCascodeconfiguration ■Lowequivalenton | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm Description TheSTC05IE150HVismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformanceinhighfrequency/highvoltageapplications.itisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentCascodeconfiguration ■Lowequi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17? Description TheSTC06IE170HVismanufacturedinMonolithicESBTtechnology,aimedtoprovidethebestperformanceinHighFrequency/Highvoltageapplications.ItisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentcascodeconfiguration ■Lowequivalent | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM DESCRIPTION TheSTC08DE150ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology.TheSTC08DE150isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm Description TheSTC08DE150HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology. TheSTC08DE150HPisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Gener | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm Description TheSTC08DE150HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology. TheSTC08DE150HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Gener | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
功率開(kāi)關(guān) (PSW)
- 封裝形式:
直插封裝
- 極限工作電壓:
30V
- 最大電流允許值:
7.5A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號(hào):
3DD72A,
- 最大耗散功率:
150W
- 放大倍數(shù):
β>10
- 圖片代號(hào):
D-133
- vtest:
30
- htest:
999900
- atest:
7.5
- wtest:
150
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
STC
- 制造商:
Eaton - Bussmann Electrical Division
- 包裝:
托盤(pán)
- 描述:
STORM CENTER MERCHANDISER
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
原廠專營(yíng) |
QFP |
260 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
ST |
2339+ |
SOP8 |
6232 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
STC原裝特價(jià) |
13+ |
PLCC-44 |
1000 |
特價(jià)熱銷(xiāo)現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
STC |
16+ |
QFP |
10 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
2022 |
DIP20 |
3268 |
原廠原裝正品,價(jià)格超越代理 |
詢價(jià) | ||
ST |
14+ |
LSSOP |
150 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨 |
詢價(jià) | ||
STC |
07+ |
SOP20 |
886 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢 |
詢價(jià) | ||
STC |
2018+ |
SOP28 |
26976 |
代理原裝現(xiàn)貨/特價(jià)熱賣(mài)! |
詢價(jià) | ||
ST現(xiàn)貨 |
2022+ |
8-SOIC(0.154,3.90mm寬) |
250000 |
專注工業(yè)、軍工級(jí)別芯片,十五年優(yōu)質(zhì)供應(yīng)商 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- STC1015
- STC1015B
- STC1015D
- STC1016
- STC1016B
- STC1016D
- STC1035
- STC1036
- STC1080
- STC1082
- STC1084
- STC1091
- STC1102
- STC1106
- STC1300
- STC1312
- STC1314
- STC1332
- STC1400
- STC1551
- STC1553
- STC1555
- STC1728
- STC1733
- STC1738
- STC1850
- STC2104
- STC2106
- STC2108
- STC2221
- STC2223
- STC2225
- STC2227
- STC2229
- STC2231
- STC5081
- STC5083
- STC5085
- STC5203
- STC5205
- STC5207
- STC5520/1
- STC5522/1
- STC5524/1
- STC5611
相關(guān)庫(kù)存
更多- STC1015A
- STC1015C
- STC1015E
- STC1016A
- STC1016C
- STC1016E
- STC1035A
- STC1036A
- STC1081
- STC1083
- STC1085
- STC1101
- STC1103
- STC1106A
- STC1311
- STC1313
- STC1331
- STC1336
- STC1550
- STC1552
- STC1554
- STC1726
- STC1731
- STC1736
- STC1800
- STC2103
- STC2105
- STC2107
- STC2220
- STC2222
- STC2224
- STC2226
- STC2228
- STC2230
- STC5080
- STC5082
- STC5084
- STC5202
- STC5204
- STC5206
- STC5519/1
- STC5521/1
- STC5523/1
- STC5610
- STC5612