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STC

Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

STC

包裝:托盤(pán) 描述:STORM CENTER MERCHANDISER

Eaton - Bussmann Electrical Division

Eaton - Bussmann Electrical Division

Eaton - Bussmann Electrical Division

STC

包裝:托盤(pán) 描述:STORM CENTER MERCHANDISER

Eaton - Bussmann Electrical Division

Eaton - Bussmann Electrical Division

Eaton - Bussmann Electrical Division

STC

包裝:托盤(pán) 描述:STORM CENTER MERCHANDISER

Eaton - Bussmann Electrical Division

Eaton - Bussmann Electrical Division

Eaton - Bussmann Electrical Division

STC03DE150

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 ohm

DESCRIPTION TheSTC03DE150ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE150isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC03DE170

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm

DESCRIPTION TheSTC03DE170ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE170isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC03DE170HP

Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM

Description TheSTC03DE170HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE170HPisdesignedforuseinauxflybacksmpsforanythreephaseapplication.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC03DE170HV

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 OHM

Description TheSTC03DE170HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE170HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Featur

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC03DE220HP

Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 ?

Description TheSTC03DE220HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE220HPisdesignedforuseinauxflybackSMPSforanythreephaseapplication. Featur

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC03DE220HV

Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33OHM

Description TheSTC03DE220HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC03DE220HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC04IE170HP

Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM

Description TheSTC04IE170HPismanufacturedinMonolithicESBTtechnology,aimedtoprovidethebestperformanceinHighFrequency/Highvoltageapplications.ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentcascodeconfiguration

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC04IE170HV

Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W

Description TheSTC04IE170HVismanufacturedinMonolithicESBTtechnology,aimedtoprovidethebestperformanceinHighFrequency/Highvoltageapplications.ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentcascodeconfiguration ■Loweq

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC05DE120HV

Hybrid emitter switched bipolar transistor ESBT? 1200V - 5A - 0.18 ohm

Description TheSTC05DE120HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC05DE120HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Genera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC05DE150

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 5 A - 0.10 ohm

DESCRIPTION TheSTC05DE150ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedtoprovidingthebestperformanceinESBTtopology.TheSTC05DE150isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC05IE150HP

Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM

Description TheSTC05IE150HPismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformanceinhighfrequency/highvoltageapplications.itisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentCascodeconfiguration ■Lowequivalenton

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC05IE150HV

Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

Description TheSTC05IE150HVismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformanceinhighfrequency/highvoltageapplications.itisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentCascodeconfiguration ■Lowequi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC06IE170HV

Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?

Description TheSTC06IE170HVismanufacturedinMonolithicESBTtechnology,aimedtoprovidethebestperformanceinHighFrequency/Highvoltageapplications.ItisdesignedforuseinGateDrivenbasedtopologies. Features ■Highvoltage/highcurrentcascodeconfiguration ■Lowequivalent

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC08DE150

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM

DESCRIPTION TheSTC08DE150ismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology.TheSTC08DE150isdesignedforuseinauxflybacksmpsforanythreephaseapplication. GeneralFe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC08DE150HP

Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

Description TheSTC08DE150HPismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology. TheSTC08DE150HPisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Gener

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STC08DE150HV

Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

Description TheSTC08DE150HVismanufacturedinahybridstructure,usingdedicatedhighvoltageBipolarandlowvoltageMOSFETtechnologies,aimedatprovidingthebestperformanceinESBTtopology. TheSTC08DE150HVisdesignedforuseinauxflybacksmpsforanythreephaseapplication. Gener

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

晶體管資料

  • 型號(hào):

    STC1015

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    功率開(kāi)關(guān) (PSW)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    7.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    3DD72A,

  • 最大耗散功率:

    150W

  • 放大倍數(shù):

    β>10

  • 圖片代號(hào):

    D-133

  • vtest:

    30

  • htest:

    999900

  • atest:

    7.5

  • wtest:

    150

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    STC

  • 制造商:

    Eaton - Bussmann Electrical Division

  • 包裝:

    托盤(pán)

  • 描述:

    STORM CENTER MERCHANDISER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Eaton
22+
NA
168
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QFP
260
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ST
2339+
SOP8
6232
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STC原裝特價(jià)
13+
PLCC-44
1000
特價(jià)熱銷(xiāo)現(xiàn)貨庫(kù)存
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STC
16+
QFP
10
原裝現(xiàn)貨假一罰十
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ST
2022
DIP20
3268
原廠原裝正品,價(jià)格超越代理
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ST
14+
LSSOP
150
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STC
07+
SOP20
886
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STC
2018+
SOP28
26976
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ST現(xiàn)貨
2022+
8-SOIC(0.154,3.90mm寬)
250000
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