STB6NB50中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
STB6NB50 |
功能描述 | N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET |
文件大小 |
92.75 Kbytes |
頁面數(shù)量 |
9 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導體】 |
中文名稱 | 意法半導體(ST)集團官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-20 23:52:00 |
STB6NB50規(guī)格書詳情
DESCRIPTION
Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 1.35 ?
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
產(chǎn)品屬性
- 型號:
STB6NB50
- 功能描述:
MOSFET N-Ch 500 Volt 6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
01+ |
TO-263 |
200 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ST/意法 |
24+ |
TO263 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費! |
詢價 | ||
ST/意法 |
22+ |
TO-263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
24+ |
N/A |
2500 |
詢價 | ||||
ST |
21+ |
TO-263 |
200 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ST |
2315+ |
D2PAK |
3866 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 | ||
ST |
TO 263 |
93480 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
23+ |
TO-263 |
8795 |
詢價 | |||
ST |
23+ |
TO-263 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
ST/意法 |
21+ |
TO-263 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 |