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STB6NB50中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

STB6NB50
廠商型號

STB6NB50

功能描述

N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET

文件大小

92.75 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體(ST)集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-20 23:52:00

STB6NB50規(guī)格書詳情

DESCRIPTION

Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.35 ?

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

產(chǎn)品屬性

  • 型號:

    STB6NB50

  • 功能描述:

    MOSFET N-Ch 500 Volt 6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
ST
01+
TO-263
200
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST/意法
24+
TO263
58000
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
詢價
ST/意法
22+
TO-263
100000
代理渠道/只做原裝/可含稅
詢價
24+
N/A
2500
詢價
ST
21+
TO-263
200
原裝現(xiàn)貨假一賠十
詢價
ST
2315+
D2PAK
3866
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價
ST
TO 263
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST
23+
TO-263
8795
詢價
ST
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
ST/意法
21+
TO-263
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價