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STB5N62K3

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STB5N62K3

N-Channel 650V (D-S)Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

5N62K3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STD5N62K3

N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STF5N62K3

N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP5N62K3

N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STU5N62K3

N-channel620V,1.28ohm,4.2ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    STB5N62K3

  • 功能描述:

    MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH3

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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ST
23+
TO263
6996
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ST
22+23+
TO263
75542
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
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STMicroelectronics
21+
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2000
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STM原廠目錄
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28500
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S
23+
DPAK
10000
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22+
NA
3000
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ST
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
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ST
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
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ST
21+
TO2633 D2Pak (2 Leads + Tab) T
63880
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ST/意法
23+
TO263
11200
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更多STB5N62K3供應(yīng)商 更新時(shí)間2024-11-5 14:52:00