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STB50NE10L中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

STB50NE10L
廠商型號

STB50NE10L

功能描述

N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET

文件大小

51.01 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-20 22:30:00

STB50NE10L規(guī)格書詳情

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020 ?

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE AT 100 °C

■ APPLICATION ORIENTED CHARACTERIZATION

■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

產(chǎn)品屬性

  • 型號:

    STB50NE10L

  • 功能描述:

    MOSFET RO 511-STB40NF10L

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
VBsemi
2020+
D2PAK
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ST/意法
TO-263
699839
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
ST/意法
21+
TO-263
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
ST
24+
D2PAK
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
ST/意法
22+
TO263
39197
鄭重承諾只做原裝進口現(xiàn)貨
詢價
ST
23+
TO-263
16900
正規(guī)渠道,只有原裝!
詢價
24+
N/A
1860
詢價
ST
22+
TO
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
ST
23+
TO-263
8795
詢價