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STB20NM65N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB20NM65N

Low gate input resistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF20NM65N

N-channel650V,0.250廓,15ATO-220,TO-220FPsecondgenerationMDmesh??PowerMOSFET

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description ThesedevicesareN-channelPowerMOSFETs realizedusingthesecondgenerationMDmesh? technology.ThisrevolutionaryPowerMOSFET ass

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF20NM65N

Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF20NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STFI20NM65N

N-channel650V,15A,0.250廓typ.,MDmesh??IIPowerMOSFETinaI?PAKFPpackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI20NM65N

Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP20NM65N

N-channel650V,0.250廓,15ATO-220,TO-220FPsecondgenerationMDmesh??PowerMOSFET

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description ThesedevicesareN-channelPowerMOSFETs realizedusingthesecondgenerationMDmesh? technology.ThisrevolutionaryPowerMOSFET ass

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP20NM65N

Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW20NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW20NM65N

Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    STB20NM65N

  • 功能描述：

    MOSFET N-Channel 650V Pwr Mosfet

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
2020+
TO-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
ST
TO-263
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST/意法
22+
TO-263
87813
詢價(jià)
ST
23+
TO-263
8795
詢價(jià)
ST
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢價(jià)
ST/意法
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
S
23+
D2PAK
10000
公司只做原裝正品
 詢價(jià)
S
D2PAK
22+
6000
十年配單,只做原裝
 詢價(jià)
S
22+
D2PAK
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
ST/意法
24+
TO263
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
更多STB20NM65N供應(yīng)商 更新時(shí)間2024-12-26 22:30:00

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