首頁 >SSU4N60BTU>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-channelMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-ChannelMOSFET | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-channelMOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelI-PAK/D-PAK/TO-220FMOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelTO-220F/I-PAKN/D-PAKMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelEnhancedmodeTO-252/TO-220F/TO-251SMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelEnhancementmodeTO-251/TO-252MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelTO-220F/I-PAK/D-PAKMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
詳細參數(shù)
- 型號:
SSU4N60BTU
- 功能描述:
MOSFET NCh/600V/2.8a/2.5Ohm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
S |
23+ |
TO263 |
10000 |
公司只做原裝正品 |
詢價 | ||
VB |
21+ |
TO263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
S |
TO263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
SECOS |
2022+ |
TO-263 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
TO263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
TO263 |
20000 |
原裝正品 歡迎咨詢 |
詢價 | ||
TE/泰科 |
2420+ |
/ |
233927 |
一級代理,原裝正品! |
詢價 | ||
SUPER超致 |
2019 |
TO-251 |
17 |
原裝正品現(xiàn)貨 |
詢價 | ||
SyncMOS |
23+ |
PLCC44 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
SYNCMOS |
21+ |
PLCC44 |
10000 |
原裝,品質(zhì)保證,請來電咨詢 |
詢價 |
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