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SST28VF040A-200-4C-EH

4Mbit(512Kx8)SuperFlashEEPROM

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4C-EH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4C-NH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4C-NH

4Mbit(512Kx8)SuperFlashEEPROM

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4C-PH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4C-WH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4I-EH

4Mbit(512Kx8)SuperFlashEEPROM

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4I-EH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4I-NH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4I-NH

4Mbit(512Kx8)SuperFlashEEPROM

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4I-PH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

SST28VF040A-200-4I-WH

4Mbit(512Kx8)SuperFlashEEPROM

PRODUCTDESCRIPTION TheSST28SF/VF040Aare512Kx8bitCMOSSectorErase,Byte-ProgramEEPROMs.TheSST28SF/VF040AaremanufacturedusingSST’sproprietary,highperformanceCMOSSuperFlashEEPROMTechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliability

SST

Silicon Storage Technology, Inc

詳細(xì)參數(shù)

  • 型號:

    SST28VF040A-200-4C-EHE

  • 功能描述:

    電可擦除可編程只讀存儲器 512K X 8 200ns

  • RoHS:

  • 制造商:

    Atmel

  • 存儲容量:

    2 Kbit

  • 組織:

    256 B x 8

  • 數(shù)據(jù)保留:

    100 yr

  • 最大時鐘頻率:

    1000 KHz

  • 最大工作電流:

    6 uA

  • 工作電源電壓:

    1.7 V to 5.5 V

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-8

供應(yīng)商型號品牌批號封裝庫存備注價格
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2016+
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6528
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全新原裝正品現(xiàn)貨,支持訂貨
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80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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22+
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3000
原裝正品,支持實單
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22+
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8700
原裝現(xiàn)貨
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2023+
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8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
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22+
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38582
鄭重承諾只做原裝進(jìn)口貨
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更多SST28VF040A-200-4C-EHE供應(yīng)商 更新時間2024-11-18 16:58:00