首頁 >SS2712KSOT>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SS2712KSOT | Hall Latch - High Sensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | |
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
TOSHIBACCDLinearImageSensorCCD TheTCD2712DGisahighsensitiveandlowdarkcurrent7500 elements?3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7500elements?3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply. | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ALSProximitySensorModule Features ?Tiny1mmx2mmx0.5mmmodule ?1.8Vpowersupplywith1.8VI2Cbus ?Sleepmode(0.7μA) ?VCSELIRemitter ?Integratedfactorycalibrated940nmIRVCSEL ?Crosstalkandambientlightcancellation ?Wideconfigurationrange ?Highsensitivity ?2channels(photopicALS+IR) | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
TW2710andTW2712SingleBandGNSSAntennas | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2712GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=21mΩMAX.(VGS=?4.5V, | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
SWITCHINGP-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
2.6GHzWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
2.5GHzSILICONMMICWIDE-BANDAMPLIFIER DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
3.3V,SILICONGERMANIUMMMICWIDEBANDAMPLIFIER | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | CEL California Eastern Labs | CEL |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IXYS |
1931+ |
N/A |
60 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
IXYS-RF |
1809+ |
DE275 |
26 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
IXYS |
22+ |
NA |
60 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IXYS |
22+ |
DE275 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IXYS-RF |
24+ |
6-SMD 扁平引線裸焊盤 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
SMG |
05+ |
原廠原裝 |
262 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
SMG |
24+ |
QFP |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
NA |
20+ |
QFP |
500 |
樣品可出,優(yōu)勢庫存歡迎實(shí)單 |
詢價(jià) | ||
NA |
23+ |
QFP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NA |
21+ |
QFP |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
