首頁 >SS2609KSTT>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SS2609KSTT | Hall Latch - High Sensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | |
BroadbandPhotodiodeModule The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic | EMCORE Emcore Corporation | EMCORE | ||
2609BBroadbandPhotodiodeModule Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro | agere Agere Systems | agere | ||
2609CBroadbandPhotodiodeModule Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa | agere Agere Systems | agere | ||
SimpleDriveRequirement,SmallPackageOutline | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
SimpleDriveRequirement,SmallSize&LowerProfile | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2 | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-Ch20VFastSwitchingMOSFETs Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved. | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BROADCOM/博通 |
22+ |
BGA |
1260 |
原裝正品，支持實單。 |
詢價 | ||
BROADCOM/博通 |
22+ |
BGA |
260 |
原裝正品 |
詢價 | ||
BROADCOM |
22+ |
NA |
200 |
原裝正品支持實單 |
詢價 | ||
Broadcom(博通) |
2405+ |
Original |
50000 |
只做原裝優(yōu)勢現(xiàn)貨庫存,渠道可追溯 |
詢價 | ||
21+ |
N/A |
4155 |
全新原裝虧本出 |
詢價 | |||
23+ |
NA |
6800 |
原裝正品,力挺實單 |
詢價 | |||
Broadcom(博通) |
22+ |
N/A |
3206 |
原裝正品物料 |
詢價 | ||
Broadcom(博通) |
23+ |
15000 |
專業(yè)幫助客戶找貨 配單,誠信可靠! |
詢價 | |||
BROADCOM/博通 |
23+ |
BGA |
100 |
正規(guī)渠道原裝正品 |
詢價 | ||
BROADCOM |
20000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢價 |
