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SPW07N60CFD

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW07N60CFD

isc N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤700m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

07N60CFD

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CJP07N60

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP07N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CJPF07N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF07N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CMT07N60

POWERFIELDEFFECTTRANSISTOR

[ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc

ETCList of Unclassifed Manufacturers

未分類制造商

FSA07N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FTA07N60C

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H07N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H07N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H07N60F

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

ISPP07N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.7? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW07N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤700m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MH07N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MHF07N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MJU07N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

SPA07N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CR

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    SPW07N60CFD

  • 功能描述：

    MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INF
23+
TO-247
50000
全新原裝現(xiàn)貨特價銷售,歡迎來電查詢
 詢價
INFINEON
24+
PG-TO247-3
8866
詢價
INFINEON
2016+
SOP
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
 詢價
INFINEON
22+
TO-247
8000
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
INF
22+23+
TO-247
19734
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
INFINEON
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
infineon technologies
23+
NA
25987
原裝現(xiàn)貨 庫存特價/長期供應(yīng)元器件代理經(jīng)銷
 詢價
SANSUNG
2021++
三星
8000
原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15
 詢價
INFINEON/英飛凌
23+
TO-247
5425
公司只做原裝正品
 詢價
INFINEON/英飛凌
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多SPW07N60CFD供應(yīng)商 更新時間2024-12-20 17:07:00

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