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SPS02N60C3

Cool MOS??Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPS02N60C3

Cool MOS Power Transistor Feature new revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPS02N60C3

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPS02N60C3_09

Cool MOS Power Transistor Feature new revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

02N60C3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ISPD02N60C3

N-ChannelMOSFETTransistor

?DESCRITION ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPP02N60C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB02N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB02N60C3

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB02N60C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB02N60C3

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPD02N60C3

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPD02N60C3

CoolMOSPowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3

N-ChannelMOSFETTransistor

?DESCRITION ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN02N60C3

CoolMOS??PowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN02N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeUltraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N60C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP02N60C3

COOLMOSPOWERTRANSISTOR

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPS02N60C3

  • 功能描述：

    MOSFET COOL MOS POWER TRANSISTOR

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
2021+
TO-251A
17220
原裝進口假一罰十
 詢價
INFINEON
22+
TO251-3
13568
實力現(xiàn)貨,隨便驗!
 詢價
infineon
16+
PG-TO251
125
全新原裝現(xiàn)貨
 詢價
infineon
PG-TO251
9856
只做原裝貨值得信賴
 詢價
infineon
2020+
PG-TO251
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINEON
22+
TO251-3SL
5000
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
INFINE0N
23+
TO-251
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
inf進口原
22+23+
TO-251
23951
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
inf進口原
19+
TO-251
9860
一級代理
 詢價
更多SPS02N60C3供應(yīng)商 更新時間2024-10-27 14:04:00

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