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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
G20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTG20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTG20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
HGTG20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTG20N60C3D	文件：82.71 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	Intersil Intersil Corporation	Intersil
HGTG20N60C3D	文件：123.08 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTG20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTP20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTP20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTP20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
HGTP20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
ISPP20N60C3	文件：339.04 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
ISPW20N60C3	文件：335.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
SPA20N60C3	文件：313.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
SPA20N60C3	文件：1.83839 Mbytes Page：15 Pages	NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPA20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPB20N60C3	文件：788.12 Kbytes Page：12 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPB20N60C3	文件：189.21 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC

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詳細參數(shù)

型號：
SPP20N60C3X
制造商：
Infineon Technologies AG
功能描述：
Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220AB

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市安富世紀電子有限公司	SPP20N60C3X	INFINEON	23+		8000	只做原裝現(xiàn)貨	詢價
深圳市海天鴻電子科技有限公司	SPP20N60C3XKSA1	Infineon	1651+	?	7500	只做原裝進口,假一罰十	詢價
中天科工半導體（深圳）有限公司	SPP20N60C3XK	Infineon	20+	原裝	65790	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市艾宇欣科技有限公司	SPP20N60C3XKSA1	Infineon	1931+	N/A	998	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	SPP20N60C3XKSA1	INFINEON/英飛凌	2021+	NA	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市博正芯科技有限公司	SPP20N60C3XKSA1	Infineon Technologies	21+	D2PAK	5000	INFINEON專賣,進口原裝深圳現(xiàn)貨	詢價
深圳市科雨電子有限公司	SPP20N60C3XKSA1	INFINEON	1809+	TO220-3	1675	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市正納電子有限公司	SPP20N60C3XKSA1	Infineon(英飛凌)	23+	NA	20094	正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持	詢價
深圳市易訊博科技有限公司	SPP20N60C3XKSA1	Infineon	22+	NA	998	加我QQ或微信咨詢更多詳細信息,	詢價
深圳市河鋒鑫科技有限公司	SPP20N60C3XKSA1	Infineon Technologies	22+	TO2203	9000	原廠渠道,現(xiàn)貨配單	詢價

更多SPP20N60C3X供應商更新時間2024-12-26 15:00:00

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