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SPI12N50C3

isc N-Channel MOSFET Transistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPI12N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI12N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI12N50C3

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP12N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP12N50C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP12N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP12N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPP12N50C3

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPW12N50C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?ImprovedTransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    SPI12N50C3

  • 功能描述：

    MOSFET COOL MOS N-CH 560V 11.6A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
24+
PG-TO262-3I2PAK(TO
8866
詢價
Infineon
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINEON
23+
TO-262
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
23+
TO-262
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
INFINEON
22+
N/A
2500
進口原裝,優(yōu)勢現(xiàn)貨
 詢價
Infineon
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
INFINEON
5
詢價
INFINEON/英飛凌
22+
TO-262
20403
詢價
更多SPI12N50C3供應商 更新時間2025-3-23 15:30:00

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