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SPD02N60

SIPMO Power Transistor

SIPMOS?PowerTransistor ?N-Channel ?Enhancementmode ?Avalancherated

SIEMENSSiemens Ltd

西門子德國西門子股份公司

SPD02N60C3

Cool MOS Power Transistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3

N-Channel MOSFET Transistor

?DESCRITION ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPD02N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60S5

N-Channel MOSFET Transistor

?DESCRITION ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N60C3

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3_05

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3_08

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60S5

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    SPD02N60

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    SIPMO Power Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
5000
只做原廠渠道 可追溯貨源
 詢價
infineon
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
INFINEON
24+
TO-252
200000
詢價
INFINE0N
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
24+
TO-252
90000
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理
 詢價
INFINEON
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
infineon
2023+
P-TO252
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
infineon
2020+
P-TO252
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
MAGNACHIP/美格納
23+
SOP-8
69820
終端可以免費供樣,支持BOM配單!
 詢價
INFINEON/英飛凌
23+
TO-252D-PAK
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
更多SPD02N60供應(yīng)商 更新時間2024-11-15 16:36:00

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