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首頁(yè) >SMV2106>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
SMV2106	文件：35.68 Kbytes Page：1 Pages	PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES PLASTICSURFACEMOUNTGENERALPURPOSEABRUPTVARACTORDIODES DCPowerDissipation@Ta=25°C250mW ReverseBreakdownVoltage@10μA30VMin MaxReverseCurrent(IR)@Ta=25°C0.1μA@25Vdc OperatingTemperature(Topr)-55to+125°C StorageT	KNOX Knox Semiconductor, Inc	KNOX
SP2106	文件：115.75 Kbytes Page：7 Pages	SuperhighdensecelldesignforlowRDS(ON). STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN	SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司	Samhop
TN2106	文件：822.75 Kbytes Page：14 Pages	N-ChannelEnhancement-ModeVerticalDMOSFET	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
TN2106	文件：550.85 Kbytes Page：6 Pages	N-ChannelEnhancement-ModeVerticalDMOSFET	SUTEX Supertex, Inc	SUTEX
TN2106	文件：550.85 Kbytes Page：6 Pages	N-ChannelEnhancement-ModeVerticalDMOSFET	SUTEX Supertex, Inc	SUTEX
TN2106	文件：32.189 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped	SUTEX Supertex, Inc	SUTEX
TN2106ND	文件：45.67 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs	SUTEX Supertex, Inc	SUTEX
TN2106ND	文件：32.189 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped	SUTEX Supertex, Inc	SUTEX
TPC-2106	文件：1.00099 Mbytes Page：5 Pages	IndustrialWindowsCETouchPanelComputers	NI National Instruments Inc.	NI
TR2106SY	文件：255.77 Kbytes Page：7 Pages	RECTIFIERDIODE FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers	TRSYS Transys Electronics	TRSYS
TW2106	文件：254.43 Kbytes Page：2 Pages	TW2106/TW2108EmbeddedPrecisionGPSL1Antenna	TALLYSMAN Tallysman Wireless Inc.	TALLYSMAN
UM2106	文件：299.03 Kbytes Page：6 Pages	ATTENUATORANDPOWERPINDIODES2??30MHz	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
UM2106	文件：113.95 Kbytes Page：3 Pages	PINDIODE DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
UM2106B	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UM2106D	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UPG2106	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPG2106TB	文件：155.75 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@	CEL California Eastern Labs	CEL
UPG2106TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
UPG2106TB	文件：247.61 Kbytes Page：14 Pages	GaAsINTEGRATEDCIRCUITS FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
VN2106	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX

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詳細(xì)參數(shù)

型號(hào)：
SMV2106
制造商：
KNOX
制造商全稱：
KNOX
功能描述：
PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
北京逸博微科技有限公司	SMV2106				10	優(yōu)勢(shì)庫(kù)存,全新原裝	詢價(jià)
深圳市創(chuàng)盛芯科技有限公司	SMV2106	M/A-COM	24+		36000	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市弘為電子有限公司	SMV2109-079	ALPHAINDUST	24+	原裝進(jìn)口原廠原包接受訂貨	72000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市振宏微科技有限公司	SMV2109-079	SOD-423	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	SMV2109-079	ALPHA	21+	SOD-323	48000	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市明盛嘉電子科技有限公司	SMV2109-079	SKYWORKS/思佳訊	21+	SMD	5000	原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	SMV2109-079	SKYWORKS/思佳訊	23+	SOD-423	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市英瑞爾電子科技有限公司	SMV2109-079	SKY	24+	SMD	2600	原裝現(xiàn)貨假一賠十	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	SMV2109-079	ALPHA	23+	SC79	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢價(jià)
深圳廊盛科技有限公司	SMV2109-079	SKYWORK	22+	SMD	50000	只做正品原裝,假一罰十,歡迎咨詢	詢價(jià)

更多SMV2106供應(yīng)商更新時(shí)間2025-1-15 10:00:00

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