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SPH6012FT

SMDPOWERINDUCTORS(PRELIMINARY)

SUPERWORLDSuperworld Electronics

超級(jí)世界電子超級(jí)世界電子公司

STB6012

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STB6012

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STBR6012

Highvoltagerectifierforbridgeapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STBR6012W

Highvoltagerectifierforbridgeapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STBR6012-Y

Automotivehighvoltagerectifierforbridgeapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH6012

Ultrafastrecovery-1200Vdiode

Description Thehighqualitydesignofthisdiodehasproducedadevicewithlowleakagecurrent,regularlyreproduciblecharacteristicsandintrinsicruggedness.Thesecharacteristicsmakeitidealforheavydutyapplicationsthatdemandlongtermreliability. Suchdemandingapplicationsinclud

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH6012W

60Ampere,1200VoltSwitchModeSingleFastRecoveryEpitaxialDiode

GENERALDESCRIPTION STTH6012WusingthelastestFREDFABprocess(planarpassivationchip)withultrafastandsoftrecoverycharacteristic. PRODUCTFEATURE ?UltrafastRecoveryTime ?SoftRecoveryCharacteristics ?LowRecoveryLoss ?LowForwardVoltage ?HighSurgeCurrentCapability ?L

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

STTH6012W

Ultrafastrecovery-1200Vdiode

Description Thehighqualitydesignofthisdiodehasproducedadevicewithlowleakagecurrent,regularlyreproduciblecharacteristicsandintrinsicruggedness.Thesecharacteristicsmakeitidealforheavydutyapplicationsthatdemandlongtermreliability. Suchdemandingapplicationsinclud

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU6012

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

晶體管資料

  • 型號(hào):

    SLA6012

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N/P+Darl

  • 性質(zhì):

    3*N-DRAL+3*P-DRAL

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    12

  • 可代換的型號(hào):

  • 最大耗散功率:

    25W

  • 放大倍數(shù):

    β>2000

  • 圖片代號(hào):

    I-25

  • vtest:

    60

  • htest:

    999900

  • atest:

    4

  • wtest:

    25

詳細(xì)參數(shù)

  • 型號(hào):

    SLA6012

  • 制造商:

    Sanken Electric Co Ltd

  • 功能描述:

    TRANS NPN + PNP DARL 60V 4A 3PH

  • 制造商:

    ALLEGRO

  • 功能描述:

    Array for 3-Phase Motor Drive

  • 制造商:

    Allegro MicroSystems LLC

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5000
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SANKEN
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100500
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更多SLA6012供應(yīng)商 更新時(shí)間2025-4-12 16:00:00