訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
首頁>SIR802DP-T1-GE3>芯片詳情
SIR802DP-T1-GE3_VISHAY/威世科技_MOSFET 20 Volts 30 Amps 27.7 Watts潤聯(lián)芯城
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SIR802DP-T1-GE3
- 功能描述:
MOSFET 20 Volts 30 Amps 27.7 Watts
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市潤聯(lián)芯城科技有限公司
- 商鋪:
- 聯(lián)系人:
姚先生
- 手機(jī):
13410022949
- 詢價(jià):
- 電話:
0755-88356848
- 地址:
深圳市福田區(qū)華強(qiáng)北路1019號華強(qiáng)B座25樓
相近型號
- SIR800DP-T1-RE3
- SIR804DP-T1-GE3
- SIR804DP-T1-GE3IC
- SIR800DP-T1-GE3
- SIR808DP
- SIR800DPT1GE3
- SIR808DP-T1-E3
- SIR800DP-T1-E3
- SIR808DPT1GE3
- SIR800DP
- SIR808DP-T1-GE3
- SIR800ADP-T1-RE3
- SIR800ADP-T1-GE3
- SIR808P-T1-GE3
- SIR800ADP-T1-E3
- SIR812DP
- SIR800
- SIR812DP-T1-E3
- SIR798DP-T1-GE3
- SIR812DPT1GE3
- SIR798DP-T1-E3
- SIR812DP-T1-GE3
- SIR798DP
- SIR814DP
- SIR788DP-T1-GE3
- SIR814DP-T1-E3
- SIR788DPT1GE3
- SIR814DPT1GE3
- SIR788DP-T1-E3
- SIR814DP-T1-GE3
- SIR788DP
- SIR814DP-T1-RE3
- SIR774DP-T1-GE3
- SIR818DP
- SIR774DPT1GE3
- SIR818DP-T1-E3
- SIR774DP-T1-E3
- SIR818DPT1GE3
- SIR770DP-T1-RE3
- SIR818DP-T1-GE3
- SIR818DP-T1-GE3IC
- SIR770DP-T1-GE3
- SIR770DPT1GE3
- SIR818DP-T1-GE5
- SIR770DP-T1-E3
- SIR770DP
- SIR820DP
- SIR765-02
- SIR820DP1-GE3
- SIR765