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IXFQ26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFR26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR26N60Q

HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS

HiPerFET?PowerMOSFETsISOPLUS247?Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2

IXYS

IXYS Corporation

IXFT26N60

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?

IXYS

IXYS Corporation

IXFT26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFT26N60Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa

IXYS

IXYS Corporation

IXFV26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFV26N60PS

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFX26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX26N60Q

HiPerFETPowerMOSFETsQ-Class

Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
23+
PAK8X8L
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
23+
PAK8X8L
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
21+
PAK8X8L
10000
原裝現(xiàn)貨假一罰十
 詢價
VISHAY/威世
24+
NA/
8955
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
VISHAY/威世
23+
PAK8X8L
7000
詢價
VISHAY/威世
24+
PAK8X8L
60000
詢價
VISHAY
20+
DFN
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
Vishay Siliconix
22+
8PowerTDFN
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Siliconix
2022+
8-PowerTDFN
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
24+
N/A
46000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多SIHH26N60EF供應(yīng)商 更新時間2025-4-28 13:00:00

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