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SIHFU224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU224

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU224

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHFU224-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU224-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU224-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU224HFR224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU224-GE3

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIIRFR224PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SLTS224B

10-WPower-Over-EthernetIsolated

TI1Texas Instruments

德州儀器

SMTPB224

TRISILTM

DESCRIPTION TheSMTPBxxserieshasbeendesignedtoprotecttelecommunicationequipmentagainstlightningandtransientinducedbyACpowerlines. FEATURES BIDIRECTIONALCROWBARPROTECTION. BREAKDOWNVOLTAGERANGE:From62VTo270V. HOLDINGCURRENT:IH=150mAmin REPETITIVEPE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SN224

SFP2*2CAGECONN

VITALCONNVITALCONN ELECTRONICS HK LTD.

維達(dá)康電子維達(dá)康電子(香港)有限公司

SR224

224.70MHzOne-PortSAWResonator

224.70MHzOne-PortSAWResonator ?Idealfor224.70MHzTransmitters ?VeryLowInsertionLoss ?QuartzStability ?Rugged,Hermetic,LowProfileTO-39Package

VANLONGVanlong Technology Co., Ltd.

萬(wàn)隆科技萬(wàn)隆科技股份有限公司

SSW224

DC-6GHZHIGHISOLATIONSPDTGAASMMICSWITCH

ProductDescription StanfordMicrodevices’SSW-224isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures ?HighIsolation:40dBat2GHz,30dBat6GHz ?LowDCPowerConsumption ?BroadPerforman

STANFORD

Stanford Microdevices

SSW-224

DC-6GHZHIGHISOLATIONSPDTGAASMMICSWITCH

ProductDescription StanfordMicrodevices’SSW-224isahighperfomanceGalliumArsenideFieldEffectTransistorMMICswitchhousedinalow-costsurface-mountable8-pinceramicpackage. ProductFeatures ?HighIsolation:40dBat2GHz,30dBat6GHz ?LowDCPowerConsumption ?BroadPerforman

STANFORD

Stanford Microdevices

STV224X

I?CBUS-CONTROLLEDMULTISTANDARDSINGLECHIPTVPROCESSOR

INTRODUCTION TheSTV224XH/228XH/223XHarefullybus-controlledICsforTVthatincludePIF,SIF,Luma,ChromaandDeflectionprocessingfunctions.Usedwithaverticalframebooster(TDA8174Afora90°chassis,STV9306fora110°chassis),theyallowmultistandard(BGDKIMNLL’,PAL/SECAM/NTSC)set

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STV224X

I?Cbus-controlledmultistandardsinglechipTVprocessor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STV224XC

I2CBUS-CONTROLLEDMULTISTANDARDSINGLECHIPTVPROCESSOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    SIHFU224

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
VISHAY/威世
23+
TO-251
10000
公司只做原裝正品
 詢價(jià)
VISHAY/威世
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
apec
2023+
TO-251
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
VISHAY/威世
22+
TO-251
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
VISHAY/威世
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
Vishay
24+
TO-251
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
VB
21+
TO-251
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
VISHAY/威世
23+
TO-251
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
V
24+
TO-251
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
更多SIHFU224供應(yīng)商 更新時(shí)間2025-1-4 14:50:00

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