首頁(yè)>SIHFI740GLC-E3>規(guī)格書(shū)詳情
SIHFI740GLC-E3中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
SIHFI740GLC-E3規(guī)格書(shū)詳情
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink.
FEATURES
? Ultra Low Gate Charge
? Reduced Gate Drive Requirement
? Enhanced 30 V VGS Rating
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Repetitive Avalanche Rated
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號(hào)：
SIHFI740GLC-E3
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
Power MOSFET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
TO-220F |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
VISHAY/威世 |
20+ |
TO-220F |
7500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) | ||
V |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
V |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
renesas |
2023+ |
TO-220F |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220F |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
VB |
21+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
