SIGC15T60SE

600V trench & field stop technology

SIGC15T60SEX7SA1

Package：模具；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 3 CHIP 600V

G15T60

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

K15T60

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

Features: ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime5?s ?TRENCHSTOP?andFieldstoptechnologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhigh

NCE15T60BD

600V,15A,TrenchFSIIFastIGBT

GeneralDescription: UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the600VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering ?VerylowVCE（sat）

SIGC15T60

IGBT3Chip

SIGC15T60E

TRENCHSTOPTMIGBT3Chip

Features: ?600Vtrench&fieldstoptechnology ?LowVCEsat ?Lowturn-offlosses ?Shorttailcurrent ?Positivetemperaturecoefficient ?Easyparalleling

SIGC15T60S

IGBT3Chip600VTrench&FieldStoptechnologypositivetemperaturecoefficient

SIGC15T60UN

HighSpeedIGBTChipinNPT-technologypositivetemperaturecoefficient