零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SI549 | Ultra Low Jitter I2C Programmable XO (95 fs), 0.2 to 1500 MHz KEYFEATURES ?I2Cprogrammabletoanyfrequencyfrom0.2to 1500MHzwith | SKYWORKSSkyworks Solutions Inc. 思佳訊美國(guó)思佳訊公司 | SKYWORKS | |
P-Channel 1.5-V (G-S) MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
P-Channel 1.5-V (G-S) MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TwoChannelDirectDriveSpeechController? INTRODUCTION SNC549isatwo-channelvoicesynthesizerICwithPWMdirectdrivecircuit.Itbuilt-ina4-bittinycontrollerwithone4-bitinputport,two4-bitoutputportsandthree4-bitI/Oports.ByprogrammingthroughthetinycontrollerinSNC549,user’svariedapplicationsincludingvoic | SONiXSONiX Technology Company 松翰科技 | SONiX | ||
SurfaceMountSensors | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國(guó)際 | Honeywell | ||
EpitaxialplanarPNPsilicontransistor Description ?Dualchipdigitaltransistor Features ?TwoSRA2211chipsinSOT-363package ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess | AUK AUK corp | AUK | ||
EpitaxialplanarPNPsilicontransistor Description ?Dualchipdigitaltransistor Features ?TwoSRA2211chipsinSOT-363package ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SILICONNPNEPITAXIALTYPE(PCTPROCESS) PRIMARILYINTENDEDFORLOWNOISESTAGEOFAUDIO AMPLIFIERS. FEATURES : .LowNoise:4dBMax.(TBC549) 3dBMax.(TBC550) .HighVCEo:30V(TBC549) 45V(TBC550) .HighhpE:200~800 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Digitalmanifold | TESTO testo | TESTO | ||
Filterspecification | Vectron Vectron International, Inc | Vectron |
詳細(xì)參數(shù)
- 型號(hào):
SI549
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
P-Channel 1.5-V(G-S) MOSFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
VISHAY |
23+ |
MLP-8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
VISHAY |
1809+ |
1206-8 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
Vishay Siliconix |
22+ |
8SMD Flat Lead |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
QFN |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
8-SMD,扁平引線 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
VISHAY/威世 |
22+ |
SOT23-8 |
25000 |
只有原裝絕對(duì)原裝,支持BOM配單! |
詢價(jià) | ||
VISHAY/威世 |
1206-8 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
VISHAY/威世 |
22+ |
SOT23-8 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
1206-8 |
54258 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
DELTA/臺(tái)達(dá) |
23+ |
SMD |
17650 |
專注電感/現(xiàn)貨足訂貨快價(jià)格優(yōu)品質(zhì)保證 |
詢價(jià) |
相關(guān)規(guī)格書
更多- SI5499DC-T1-GE3
- SI5504BDC-T1-GE3
- SI5509DC-T1-E3
- SI5513CDC-T1-GE3
- SI5515CDC
- SI5515CDC-T1-GE3
- SI5517DU-T1-GE3
- SI560M200
- SI560M250-BULK
- SI56M450
- SI5853DC
- SI5855CDC-T1-E3
- SI5855DC-T1-E3
- SI5902BDC-T1-GE3
- SI5906DU-T1-GE3
- SI5908DC-T1-GE3
- SI5933CDC-T1-E3
- SI5935CDC-T1-E3
- SI5936DU-T1-GE3
- SI5947DU-T1-GE3
- SI5997DU-T1-GE3
- SI5XX-PROG-EVB
- SI-60001-F
- SI-60005-F
- SI-60024-F
- SI-60063-F
- SI-60118-F
- SI-60136-F
- SI-60182-F
- SI6415DQ-T1-E3
- SI6423DQ-T1-E3
- SI6433BDQ-T1-GE3
- SI6463BDQ-T1-E3
- SI6467BDQ-T1-E3
- SI6544BDQ-T1-GE3
- SI6562DQ-T1-E3
- SI6800M80
- SI680M450
- SI6913DQ-T1-GE3
- SI6926ADQ-T1-E3
- SI6943BDQ-T1-E3
- SI6954ADQ-T1-GE3
- SI6968BEDQ-T1-E3
- SI6981DQ-T1-E3
- SI7005-B-FM
相關(guān)庫(kù)存
更多- SI5504BDC-T1-E3
- SI5504DC
- SI5513CDC-T1-E3
- SI5513DC
- SI5515CDC-T1-E3
- SI5515DC-T1-E3
- SI5600M25
- SI560M250
- SI560M450
- SI570-PROG-EVB
- SI5853DDC-T1-E3
- SI5855DC
- SI5902BDC-T1-E3
- SI5902DC-T1-E3
- SI5908DC-T1-E3
- SI5913DC-T1-GE3
- SI5933CDC-T1-GE3
- SI5935CDC-T1-GE3
- SI5944DU-T1-GE3
- SI5980DU-T1-GE3
- SI5999EDU-T1-GE3
- SI-60001
- SI-60002-F
- SI-60022-F
- SI-60062-F
- SI-60110-F
- SI-60128-F
- SI-60159-F
- SI-61001-F
- SI6415DQ-T1-GE3
- SI6423DQ-T1-GE3
- SI6435ADQ-T1-E3
- SI6463BDQ-T1-GE3
- SI6467BDQ-T1-GE3
- SI6562CDQ-T1-GE3
- SI6562DQ-T1-GE3
- SI680M250
- SI6913DQ-T1-E3
- SI6925ADQ-T1-GE3
- SI6926ADQ-T1-GE3
- SI6954ADQ-T1-E3
- SI6963BDQ-T1-E3
- SI6968BEDQ-T1-GE3
- SI6981DQ-T1-GE3
- SI7005-B-FM1