首頁 >SGR2N60UFTF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛半導體深圳深愛半導體股份有限公司 | SISEMIC | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛半導體深圳深愛半導體股份有限公司 | SISEMIC | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導體有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導體有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導體有限公司 | MAPLESMI | ||
600VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導體有限公司 | MAPLESMI | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowerRDS(ON):3.892W(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseinth | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild |
詳細參數(shù)
- 型號:
SGR2N60UFTF
- 功能描述:
IGBT 晶體管
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Lumberg |
2022+ |
247 |
全新原裝 貨期兩周 |
詢價 | |||
TOSHIBA |
24+ |
MODULE |
2100 |
一級代理/全新原裝現(xiàn)貨 供應!!! |
詢價 | ||
TOSHIBA/東芝 |
23+ |
MODULE |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
TOSHIBA |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
TOSHIBA |
18+ |
MODULE |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
新佳電子 |
23+ |
NA |
4500 |
新佳電子系列在售 |
詢價 | ||
Mechatronics |
1931+ |
N/A |
3362 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
24+ |
N/A |
4000 |
詢價 | ||||
UNITED(怡德) |
23+ |
插件,D4xL7mm |
8215 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
24+ |
N/A |
64000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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