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SDS120J030G3

Marking：DS120030G3；Package：TO-247-3L；3rd Generation 1200V/30A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J030H3

Marking：DS120030H3；Package：TO-247-2L；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J030H5

5th Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionarysemiconductormaterial-SiliconCarbide(SiC) Noreverserecovery High-speedswitchingperformance Temperature-independentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom-55℃to175℃ RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J040B3

3rd Generation 1200V/40A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J040G3

Marking：DS120040G3；Package：TO-247-3L；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J040H3

Marking：DS120040H3；Package：TO-247-2L；3rd Generation 1200V/40A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J040H5

Marking：DS120040H5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionarysemiconductormaterial-SiliconCarbide(SiC) Noreverserecovery High-speedswitchingperformance Temperature-independentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom-55℃to175℃ RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J040J5

Marking：DS120040J5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionarysemiconductormaterial-SiliconCarbide(SiC) Noreverserecovery High-speedswitchingperformance Temperature-independentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom-55℃to175℃ RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J050B3

3rd Generation 1200V/50A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J050H3

Marking：DS120050H3；Package：TO-247-2L；3rd Generation 1200V/50A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

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