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TCU10A60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

TK10A60D

SwitchingRegulatorApplications

?Lowdrain-sourceON-resistance:RDS(ON)=0.58?(typ.) ?Highforwardtransferadmittance:|Yfs|=6.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK10A60D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK10A60D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK10A60D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK10A60W

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

TK10A60W

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327?(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications ?SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK10A60W

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.38? ?EasytocontrolGateswitching ?Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TSU10A60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

U10A60

FASTRECTIFIERS(10A,300-600V)

UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

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2022+
5000
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KODENSKHI
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23638
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進(jìn)口原裝現(xiàn)貨,假一賠十
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24+
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60000
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更多SDB10A60C供應(yīng)商 更新時(shí)間2025-6-19 9:50:00

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