首頁 >SD200N10M>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET Description TheG200N10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarTMHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=200A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACandDCMotorDrives | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS |
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