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SCTW60N120G2AG中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SCTW60N120G2AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package |
| 絲印標識 | |
| 封裝外殼 | HiP247 |
| 文件大小 |
197.08 Kbytes |
| 頁面數(shù)量 |
11 頁 |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡稱 |
STMICROELECTRONICS【意法半導體】 |
| 中文名稱 | 意法半導體集團官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-22 15:00:00 |
SCTW60N120G2AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? High speed switching performance
? Very fast and robust intrinsic body diode
? Low capacitances
? Very high operating junction temperature capability (TJ = 200 °C)
Applications
? DC-DC converters
? Solar Inverters and renewable energy
? SMPS
? OBC
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material allow designers to use an
industry-standard outline with significantly improved thermal capability. These
features render the device perfectly suitable for high-efficiency and high power
density applications.
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
2023 |
NA |
3600 |
原廠代理渠道,正品保障 |
詢價 | ||
STMicroelectronics |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
ST/意法半導體 |
24+ |
HIP247-3 |
10000 |
原裝公司現(xiàn)貨 |
詢價 | ||
ST/意法 |
22+ |
HIP-247-3 |
18000 |
只做原裝現(xiàn)貨可開票 |
詢價 | ||
ST/意法半導體 |
21+ |
HIP247-3 |
610880 |
本公司只售原裝 支持實單 |
詢價 | ||
ST |
24+ |
HiP247 |
340 |
原裝正品 有掛有貨 假一賠十 |
詢價 | ||
ST/意法半導體 |
2021+ |
HIP247-3 |
7600 |
原裝現(xiàn)貨，歡迎詢價 |
詢價 | ||
ST/意法半導體 |
2020+ |
HIP247-3 |
7600 |
只做原裝正品,賣元器件不賺錢交個朋友 |
詢價 | ||
ST/意法半導體 |
21+ |
HIP247-3 |
12820 |
公司只做原裝,誠信經(jīng)營 |
詢價 | ||
ST/意法半導體 |
23+ |
HIP247-3 |
6000 |
我們只做原裝正品,支持檢測。 |
詢價 |
