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Humidity and Temperature Wall Mount Transducers

Features ?Enhancedaccuracy: -±4%RH(10%RHto90%RHat25°C), ±5%RH(10%RHto90%RHat5°Cto50°C) -Enablesthecustomertopotentiallyreduce/eliminate transmitterrecalibrationcostandsupportsandoptimizes systemaccuracyanduptime ?Long-termstab

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

SCT011H75G3AG

Marking：011H75G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT011HU75G3AG

Marking：SCT01175G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT012H90G3AG

Marking：12H90G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT015W120G3-4AG

Marking：015W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

Features ?AEC-Q101qualified ?Veryfastandrobustintrinsicbodydiode ?Extremelylowgatechargeandinputcapacitance ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT016H120G3AG

Marking：16H120G3AG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?DC/DCconverterforEV/HEV ?Maininverter(electrictraction)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT018H65G3AG

Marking：18H65G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT018W65G3-4AG

SiC N-Channel MOSFET

FEATURES ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive ·HighBlockingVoltagewithLowOn-Resistance APPLICATIONS ·EVBatteryChargers ·RenewableEnergy ·HighVoltageDC/DCConverters ·SwitchModePowerSupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SCT018W65G3-4AG

Marking：18W65G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SCT020H120G3AG

Marking：20H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    SCT

  • 制造商：

    MAGNELAB

  • 功能描述：

    CURRENT TRANSFORMER SPLITCORE 25A

  • 功能描述：

    CURRENT TRANSFORMER, SPLITCORE, 25A

  • 功能描述：

    CURRENT TRANSFORMER, SPLITCORE, 25A; Input

  • Current：

    25A; Turns

  • Ratio：

    -; Frequency

  • Min：

    50Hz; Frequency

  • Max：

    400Hz; Transformer

  • Mounting：

    -;

  • SVHC：

    No SVHC(19-Dec-2012);

  • Accuracy：

    1%; Current Range

  • AC：

    25A; Secondary Current

  • Nom：

    25A; Sensor ;RoHS

  • Compliant：

    Yes

供應(yīng)商型號品牌批號封裝庫存備注價格
Semitel
25+
SMD
5000
詢價
Rohm
2020+
N/A
30
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ON
23+
SSOP-8
36000
原裝正品,假一罰十
 詢價
ON
17+
SOP8
6200
100%原裝正品現(xiàn)貨
 詢價
DISCRETE
30
RHM
2610
詢價
SUMITOMO
2001
11
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
SIBERCORERP
24+
原封裝
1580
原裝現(xiàn)貨假一罰十
 詢價
SIBERCOR
09+
BGA
5500
原裝無鉛,優(yōu)勢熱賣
 詢價
SIBERCOR
BGA
321
正品原裝--自家現(xiàn)貨-實單可談
 詢價
SIBER
24+
BGA2727
31
詢價
更多SCT供應(yīng)商 更新時間2025-3-18 11:02:00

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