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S29WS256N0PBAW010中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書

S29WS256N0PBAW010
廠商型號(hào)

S29WS256N0PBAW010

功能描述

256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

文件大小

1.09158 Mbytes

頁面數(shù)量

99

生產(chǎn)廠商 SPANSION
企業(yè)簡稱

spansion飛索

中文名稱

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-19 22:59:00

S29WS256N0PBAW010規(guī)格書詳情

General Description

The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

Distinctive Characteristics

■ Single 1.8 V read/program/erase (1.70–1.95 V)

■ 110 nm MirrorBit? Technology

■ Simultaneous Read/Write operation with zero

latency

■ 32-word Write Buffer

■ Sixteen-bank architecture consisting of 16/8/4

Mwords for WS256N/128N/064N, respectively

■ Four 16 Kword sectors at both top and bottom of

memory array

■ 254/126/62 64 Kword sectors (WS256N/128N/

064N)

■ Programmable burst read modes

— Linear for 32, 16 or 8 words linear read with or

without wrap-around

— Continuous sequential read mode

■ SecSi? (Secured Silicon) Sector region consisting

of 128 words each for factory and customer

■ 20-year data retention (typical)

■ Cycling Endurance: 100,000 cycles per sector

(typical)

■ RDY output indicates data available to system

■ Command set compatible with JEDEC (42.4)

standard

■ Hardware (WP#) protection of top and bottom

sectors

■ Dual boot sector configuration (top and bottom)

■ Offered Packages

— WS064N: 80-ball FBGA (7 mm x 9 mm)

— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)

■ Low VCC write inhibit

■ Persistent and Password methods of Advanced

Sector Protection

■ Write operation status bits indicate program and

erase operation completion

■ Suspend and Resume commands for Program and

Erase operations

■ Unlock Bypass program command to reduce

programming time

■ Synchronous or Asynchronous program operation,

independent of burst control register settings

■ ACC input pin to reduce factory programming time

■ Support for Common Flash Interface (CFI)

■ Industrial Temperature range (contact factory)

產(chǎn)品屬性

  • 型號(hào):

    S29WS256N0PBAW010

  • 制造商:

    SPANSION

  • 制造商全稱:

    SPANSION

  • 功能描述:

    256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

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