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RX1214B350Y中文資料飛利浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
RX1214B350Y |
| 功能描述 | NPN microwave power transistor |
| 文件大小 |
91.62 Kbytes |
| 頁(yè)面數(shù)量 |
12 頁(yè) |
| 生產(chǎn)廠商 | NXP Semiconductors |
| 企業(yè)簡(jiǎn)稱 |
Philips【飛利浦】 |
| 中文名稱 | 荷蘭皇家飛利浦官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-4-11 9:36:00 |
| 人工找貨 | RX1214B350Y價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
RX1214B350Y規(guī)格書詳情
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.
FEATURES
? Suitable for short and medium pulse applications up to 1 ms/10
? Internal input prematching networks allow an easier design of circuits
? Diffused emitter ballasting resistors improve ruggedness
? Interdigitated emitter-base structure provides high emitter efficiency
? Gold metallization with barrier realizes very stable characteristics and excellent lifetime
? Multicell geometry improves power sharing and reduces thermal resistance.
APPLICATIONS
Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RECOM |
2021+ |
DIP |
11000 |
十年專營(yíng)原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
RECOM |
23+ |
SIPDIP |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
PHILIPPINES |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
PHILIPPINES |
24+ |
249 |
現(xiàn)貨供應(yīng) |
詢價(jià) | |||
RECOM |
23 |
DIP |
55000 |
原廠渠道原裝正品假一賠十 |
詢價(jià) | ||
PHILIPS |
1923+ |
原廠封裝 |
8600 |
萊克訊原廠貨源每一片都來(lái)自原廠原裝現(xiàn)貨薄利多 |
詢價(jià) |
