RN1118

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1118

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1118MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess ?ComplementarytoRN2114MFVtoRN2118MFV

RN1118(T5L,F,T)

Package：SC-75，SOT-416；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V 0.1A SSM

Toshiba Semiconductor and Storage

RN1118(TE85L,F)

Package：SC-75，SOT-416；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V 0.1A SSM

Toshiba Semiconductor and Storage

RN1118MFV,L3F

Package：SOT-723；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V 0.1A VESM

Toshiba Semiconductor and Storage

SC1118

1A(Sink&Source)LowDropout,LowQuiescentCurrentVoltageRegulator

SL1118

AdjustableorFixed-ModeRegulator

SPA-1118

850MHz1WattPowerAmplifierwithActiveBias

ProductDescription SirenzaMicrodevices’SPA-1118isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc

SPA1118Z

850MHz1WATTPOWERAMPLIFIERWITHACTIVEBIAS