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IIPD65R650CE

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R650CE

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages,hardswitchingPWMstagesandresonants

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R650CE

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R650CE

650VCoolMOS??CEPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPAN65R650CE

650VCoolMOSCEPowerTransistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R650CE

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R650CE

650VCoolMOS??CEPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R650CE

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPS65R650CE

650VCoolMOS?CEPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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TO-252
7500
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75000
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DWYERINSTRUMENTSINC
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57
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麗正國際
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TAIYO YUDEN
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5000
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TAIYO/太誘
100000
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TAIYO YUDEN
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518000
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更多RMA65R650SN供應(yīng)商 更新時間2025-2-13 11:00:00

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