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RM50HG-12S

HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE ?IDCDCcurrent..................................50A ?VRRMRepetitivepeakreversevoltage................600V ?trrReverserecoverytime.............0.2μs ?ONEARM ?Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

RM50HG-12S

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE ?IDCDCcurrent..................................50A ?VRRMRepetitivepeakreversevoltage................600V ?trrReverserecoverytime.............0.2μs ?ONEARM ?Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

RM50HG-12S_01

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE ?IDCDCcurrent..................................50A ?VRRMRepetitivepeakreversevoltage................600V ?trrReverserecoverytime.............0.2μs ?ONEARM ?Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

RM50N200HD

Marking：50N200；Package：TO-263；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N200T2

Marking：50N200；Package：TO-220；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N200T7

Marking：50N200；Package：TO-247；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N200TI

Marking：50N200；Package：TO-220F；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N250T2

Marking：50N250；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=250V,ID=50A RDS(ON)

RECTRON

Rectron Semiconductor

RM50N30DN

Marking：50N30；Package：DFN3x3；AdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

SimpleDriveRequirement SmallSize&LowerProfile RoHSCompliant&Halogen-Free

RECTRON

Rectron Semiconductor

RM50N60DFV

Marking：50N60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=50A RDS(ON)16mΩ@VGS=10V RDS(ON)20mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation

RECTRON

Rectron Semiconductor

詳細(xì)參數(shù)

  • 型號：

    RM5

  • 制造商：

    FERROXCUBE

  • 功能描述：

    FERRITE CORE RM/I 3C90

  • 制造商：

    Yageo/Ferroxcube

  • 功能描述：

    FERRITE CORE, RM/I, 3C90

  • 功能描述：

    FERRITE CORE, RM/I, 3C90; Core

  • Size：

    RM5/I; Material

  • Grade：

    3C90;

  • Series：

    RM; Effective Magnetic Path

  • Length：

    23.2mm; Ae Effective Cross Section

  • Area：

    24.8mm2; Inductance Factor

  • Al：

    2000nH;

  • SVHC：

    No SVHC(18-Jun-2012); External Length/;RoHS

  • Compliant：

    Yes

供應(yīng)商型號品牌批號封裝庫存備注價格
QED
00+
QFP
47
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價
QED
QFP
164
詢價
MITSUBISHI
23+
模塊
3562
詢價
PMC
25+
QFP
2309
品牌專業(yè)分銷商,可以零售
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PMC
23+
QFP
5000
原裝正品,假一罰十
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24+
SMD-8
7500
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
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MITSUBIS
23+
500A1200
595
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
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RAYTHEON
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
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RAYTHEO
2020+
N/A
18
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
MITSUBISHI
23+
MODULE
7780
全新原裝優(yōu)勢
 詢價
更多RM5供應(yīng)商 更新時間2025-3-31 16:33:00

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