零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
RLD70N10 | N-Channel Enhancement MOSFET Features ?VDS=100V,ID=70A ?RDS(ON)=8.3mΩ@VGS=10V ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | |
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.018Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.018Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175ocOperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.018?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175ocOperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.018?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-channelEnhancedmodeTO-251/TO-252/TO-220MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
100VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
聚鼎 |
24+ |
DIP |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
聚鼎 |
2017+ |
DIP |
88000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
聚鼎 |
15 |
DIP2 |
6000 |
絕對(duì)原裝自己現(xiàn)貨 |
詢價(jià) | ||
PTTC(聚鼎) |
2112+ |
Through Hole |
115000 |
500個(gè)/袋一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
聚鼎 |
23+ |
RLD |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
PTTC(聚鼎) |
21+ |
徑向引線 |
4000 |
中國(guó)航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者 |
詢價(jià) | ||
PTTC(聚鼎) |
23+ |
插件 |
6000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
24+ |
5000 |
公司存貨 |
詢價(jià) | ||||
ROHM |
2023+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | |||
ROHM |
2023+ |
DIP-3 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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